Diodes Incorporated — Analog and discrete power solutions
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DMHT3006LFJ

30V N-CHANNEL ENHANCEMENT MODE MOSFET H-BRIDGE

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance

  • Low Input Capacitance

Application(s)

  • High-Efficiency Bridge Rectifiers

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity 4N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 13
PD @TA = +25°C (W) 2.1
RDS(ON)Max@ VGS(10V)(mΩ) 10 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 15 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 9 nC
QG Typ @ |VGS| = 10V (nC) 17 nC
CISS Typ (pF) 1171 pF
CISS Condition @|VDS| (V) 15 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC