NRND = Not Recommended for New Design
N-CHANNEL ENHANCEMENT MODE MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.
Compliance (Only Automotive supports PPAP) | Standard |
---|---|
CISS Condition @|VDS| (V) | 100 |
CISS Typ (pF) | 775 |
Compliance (Only Automotive(Q) supports PPAP) | Standard |
ESD Diodes (Y|N) | No |
|IDS| @TC = +25°C (A) | 14 |
PD @TA = +25°C (W) | 2.5 |
PD @TC = +25°C (W) | 50 |
Polarity | N |
QG Typ @ |VGS| = 10V (nC) | 24.5 |
AEC Qualified | No |
RDS(ON)Max@ VGS(10V)(mΩ) | 430 |
|VDS| (V) | 650 |
|VGS| (±V) | 30 |
|VGS(TH)| Max (V) | 5 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2584 | 2022-05-19 | 2022-11-19 | Device End of Life (EOL) |