DMJ70H1D3SJ3 (Obsolete)

N-CHANNEL ENHANCEMENT MODE HV MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

100% Unclamped Inductive Switch (UIS) Test in Production
Fast Switching Speed
Low On-Resistance

Application(s)

AC-DC Converters
SMPS

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP)	No
C_ISS Condition @\|V_DS\| (V)	50
C_ISS Typ (pF)	351
ESD Diodes (Y\|N)	No
\|I_DS\| @T_A = +25°C (A)	4.6
\|I_DS\| @T_C = +25°C (A)	N/A
P_D @T_A = +25°C (W)	1.58
P_D @T_C = +25°C (W)	N/A
Polarity	N
Q_G Typ @ \|V_GS\| = 10V (nC)	13.9
Q_G Typ @ \|V_GS\| = 4.5V (nC)	N/A
AEC Qualified	No
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	N/A
R_DS(ON)Max@ V_GS(10V)(mΩ)	1300
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	N/A
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	N/A
\|V_DS\| (V)	700
\|V_GS\| (±V)	30
\|V_GS(TH)\| Max (V)	4

Technical Documents

SPICE Model

DMJ70H1D3SJ3.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2475	2020-08-06	2020-11-06	Qualification of Assembly & Test Site Transfer for Select Discrete Products