Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
TO252-DPAK.pngNRND = Not Recommended for New Design
N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| Compliance (Only Automotive supports PPAP) | Standard |
|---|---|
| CISS Condition @|VDS| (V) | 100 |
| CISS Typ (pF) | 264 |
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| ESD Diodes (Y|N) | No |
| |IDS| @TC = +25°C (A) | 4.7 |
| PD @TC = +25°C (W) | 57 |
| Polarity | N |
| QG Typ @ |VGS| = 10V (nC) | 9.8 |
| AEC Qualified | No |
| RDS(ON)Max@ VGS(10V)(mΩ) | 1400 |
| |VDS| (V) | 700 |
| |VGS| (±V) | 20 |
| |VGS(TH)| Max (V) | 5 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2607 | 2023-02-22 | 2023-08-22 | Device End of Life (EOL) |
