NRND = Not Recommended for New Design
N-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Compliance (Only Automotive supports PPAP) | Standard |
---|---|
CISS Condition @|VDS| (V) | 100 |
CISS Typ (pF) | 273 |
Compliance (Only Automotive(Q) supports PPAP) | Standard |
ESD Diodes (Y|N) | No |
|IDS| @TC = +25°C (A) | 6.1 |
PD @TA = +25°C (W) | 1.73 |
PD @TC = +25°C (W) | 78 |
Polarity | N |
QG Typ @ |VGS| = 10V (nC) | 9 |
AEC Qualified | No |
RDS(ON)Max@ VGS(10V)(mΩ) | 1400 |
|VDS| (V) | 700 |
|VGS| (±V) | 30 |
|VGS(TH)| Max (V) | 5 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2607 | 2023-02-22 | 2023-08-22 | Device End of Life (EOL) |