N-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
| CISS Condition @|VDS| (V) | 50 |
|---|---|
| CISS Typ (pF) | 686 |
| Compliance (Only Automotive Supports PPAP) | No |
| ESD Diodes (Y|N) | No |
| |IDS| @TA = +25°C (A) | N/A |
| |IDS| @TC = +25°C (A) | N/A |
| PD @TA = +25°C (W) | 600 |
| PD @TC = +25°C (W) | N/A |
| Polarity | N |
| QG Typ @ |VGS| = 10V (nC) | 20.9 |
| QG Typ @ |VGS| = 4.5V (nC) | N/A |
| AEC Qualified | No |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | N/A |
| RDS(ON)Max@ VGS(10V)(mΩ) | N/A |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | N/A |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | N/A |
| |VDS| (V) | 700 |
| |VGS| (±V) | 30 |
| |VGS(TH)| Max (V) | N/A |
