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DMJ70H600HK3 (NRND)

NRND = Not Recommended for New Design

700V N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

Low Gate Input Resistance
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Motor controls
Backlighting
AC-DC converters

Product Specifications

Product Parameters

C_ISS Condition @\|V_DS\| (V)	25
C_ISS Typ (pF)	570
Compliance (Only Automotive(Q) supports PPAP)	Standard
ESD Diodes (Y\|N)	No
\|I_DS\| @T_C = +25°C (A)	7.6
P_D @T_C = +25°C (W)	90
Polarity	N
Q_G Typ @ \|V_GS\| = 10V (nC)	17.4
AEC Qualified	No
R_DS(ON)Max@ V_GS(10V)(mΩ)	600
\|V_DS\| (V)	700
\|V_GS\| (±V)	30
\|V_GS(TH)\| Max (V)	5
\|V_GS(TH)\| Min (V)	2

Technical Documents

SPICE Model

DMJ70H600HK3.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2607	2023-02-22	2023-08-22	Device End of Life (EOL)