NRND = Not Recommended for New Design
N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.
| Compliance (Only Automotive supports PPAP) | Standard |
|---|---|
| CISS Condition @|VDS| (V) | 25 |
| CISS Typ (pF) | 643 |
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| ESD Diodes (Y|N) | No |
| |IDS| @TC = +25°C (A) | 11 |
| PD @TA = +25°C (W) | 2.19 |
| PD @TC = +25°C (W) | 113 |
| Polarity | N |
| QG Typ @ |VGS| = 10V (nC) | 18.2 |
| AEC Qualified | No |
| RDS(ON)Max@ VGS(10V)(mΩ) | 600 |
| |VDS| (V) | 700 |
| |VGS| (±V) | 30 |
| |VGS(TH)| Max (V) | 4 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2593 | 2022-11-02 | 2023-05-02 | Device End of Life (EOL) |
