12V N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
AEC Qualified | No |
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Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N+N |
ESD Diodes (Y|N) | Yes |
|VDS| (V) | 12 V |
|VGS| (±V) | 8 ±V |
|IDS| @TA = +25°C (A) | 20 |
PD @TA = +25°C (W) | 2.4 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 3.55 mΩ |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 6.9 mΩ |
|VGS(TH)| Min (V) | 0.35 V |
|VGS(TH)| Max (V) | 1.4 V |
QG Typ @ |VGS| = 4.5V (nC) | 29 (@4V) nC |
CISS Typ (pF) | 2865 pF |
CISS Condition @|VDS| (V) | 6 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
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PCN-2474 | 2020-12-16 | 2021-03-16 | Qualification of Additional Wafer Source for Select Discrete Products |