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DMN1001UCA10

12V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • CSP with Footprint 1.84mm × 1.96mm
  • Height = 0.30mm (Typical) for Low Profile
  • ESD Protection of Gate
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ 

Application(s)

  • Battery Management
  • Load Switch
  • Battery Protection

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) Yes
|VDS| (V) 12 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 20
PD @TA = +25°C (W) 2.4
RDS(ON)Max@ VGS(4.5V)(mΩ) 3.55 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 6.9 mΩ
|VGS(TH)| Min (V) 0.35 V
|VGS(TH)| Max (V) 1.4 V
QG Typ @ |VGS| = 4.5V (nC) 29 (@4V) nC
CISS Typ (pF) 2865 pF
CISS Condition @|VDS| (V) 6 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2474 2020-12-16 2021-03-16 Qualification of Additional Wafer Source for Select Discrete Products