Diodes Incorporated — Analog and discrete power solutions
Back to Inactve Datasheet Archive

DMN1016UCB6 (Obsolete)

N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications

Feature(s)

  • Low Qg & Qgd
  • Small Footprint
  • Low Profile 0.62mm height

Application(s)

  • Battery Management
  • Load Switch
  • Battery Protection

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Standard
CISS Typ (pF) 423
Compliance (Only Automotive(Q) supports PPAP) Standard
ESD Diodes (Y|N) No
|IDS| @TA = +25°C (A) 6.6
PD @TA = +25°C (W) 1.47
Polarity N
QG Typ @ |VGS| = 4.5V (nC) 4.2
AEC Qualified No
RDS(ON)Max@ VGS(2.5V)(mΩ) 23
RDS(ON)Max@ VGS(4.5V)(mΩ) 20
|VDS| (V) 12
|VGS| (±V) 8
|VGS(TH)| Max (V) 1

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2556 2021-11-22 2022-05-22 Device End of Life (EOL)