12V N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. Using Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 12 V |
| |VGS| (±V) | 8 ±V |
| |IDS| @TA = +25°C (A) | 7.5 |
| PD @TA = +25°C (W) | 1.47 |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 21 mΩ |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 30 mΩ |
| |VGS(TH)| Min (V) | 0.4 V |
| |VGS(TH)| Max (V) | 1 V |
| QG Typ @ |VGS| = 4.5V (nC) | 10.5 (@3.3V) nC |
| CISS Typ (pF) | 1002 pF |
| CISS Condition @|VDS| (V) | 6 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2508 | 2021-03-17 | 2021-03-18 | Change Date Code Marking Information from “YM” (Year/Month) to “YW” (Year/Week) |
