12V N-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP
AEC Qualified | Yes |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Automotive |
Polarity | N |
ESD Diodes (Y|N) | Yes |
|VDS| (V) | 12 V |
|VGS| (±V) | 8 ±V |
|IDS| @TA = +25°C (A) | 9.3 |
PD @TA = +25°C (W) | 1.2 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 10 mΩ |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 12 mΩ |
RDS(ON)Max@ VGS(1.8V)(mΩ) | 14 mΩ |
|VGS(TH)| Min (V) | 0.35 V |
|VGS(TH)| Max (V) | 0.8 V |
QG Typ @ |VGS| = 4.5V (nC) | 27.3 nC |
QG Typ @ |VGS| = 10V (nC) | 50.6 (@8V) nC |
CISS Typ (pF) | 2480 pF |