N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. Using Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 12 V |
| |VGS| (±V) | 8 ±V |
| |IDS| @TA = +25°C (A) | 4 |
| PD @TA = +25°C (W) | 1.34 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 42 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 50 mΩ |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 65 mΩ |
| |VGS(TH)| Max (V) | 0.7 V |
| QG Typ @ |VGS| = 4.5V (nC) | 7.2 nC |
| CISS Typ (pF) | 612 pF |
