Diodes Incorporated — Analog and discrete power solutions
PowerDI3333 8

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DMN10H170SFGQ

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Feature(s)

  • 100% Unclamped Inductive Switching, Test in Production – Ensures more reliable and robust end application
  • Low RDS(ON) – Ensures on state losses are minimized
  • Small form factor thermally efficient package enables higher density end products
  • Occupies just 33% of the board area occupied by SO-8 enabling smaller end product

Application(s)

  • Motor Control
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 100 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 2.9
|IDS| @TC = +25°C (A) 8.5
PD @TA = +25°C (W) 2
RDS(ON)Max@ VGS(10V)(mΩ) 122 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 133 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 7 nC
QG Typ @ |VGS| = 10V (nC) 14.9 nC
CISS Typ (pF) 870.7 pF
CISS Condition @|VDS| (V) 25 V

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2522 2021-08-24 2021-11-24 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly/Test Site Using PdCu or Cu Bond Wire with Standardization of Assembly Bill of Materials for Select Automotive Products