N-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
- Load Switch
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
- PPAP Capable (Note 4)
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
- Load Switch
AEC Qualified | Yes |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Automotive |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 100 V |
|VGS| (±V) | 16 ±V |
|IDS| @TA = +25°C (A) | 1.6 |
PD @TA = +25°C (W) | 1.3 |
RDS(ON)Max@ VGS(10V)(mΩ) | 220 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 250 mΩ |
|VGS(TH)| Min (V) | 1 V |
|VGS(TH)| Max (V) | 2.5 V |
QG Typ @ |VGS| = 4.5V (nC) | 4.1 nC |
QG Typ @ |VGS| = 10V (nC) | 8.3 nC |
CISS Typ (pF) | 401 pF |
CISS Condition @|VDS| (V) | 25 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2485 | 2020-12-04 | 2021-03-04 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu or Au Bond Wire, And Qualification of Additional Wafer Source for Select Discrete Automotive Products |