Diodes Incorporated — Analog and discrete power solutions
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DMN1150UFL3

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Footprint of Just 1.3 mm2
  • Ultra-Low Profile Package - 0.35mm Profile
  • Low Gate Threshold Voltage
  • Fast Switching Speed
  • Ultra-Small Surface Mount Package
  • ESD Protected Gate

Application(s)

  • Motor Control
  • Power Management Functions
  • Backlighting

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) Yes
|VDS| (V) 12 V
|VGS| (±V) 6 ±V
|IDS| @TA = +25°C (A) 2
PD @TA = +25°C (W) 0.9
RDS(ON)Max@ VGS(4.5V)(mΩ) 150 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 185 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 210 mΩ
|VGS(TH)| Min (V) 0.35 V
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 1.4 nC
CISS Typ (pF) 115 pF
CISS Condition @|VDS| (V) 6 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf