N-CHANNEL ENHANCEMENT MODE MOSFET
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| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N+N |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 12 V |
| |VGS| (±V) | 8 ±V |
| |IDS| @TA = +25°C (A) | 20.2 |
| PD @TA = +25°C (W) | 1.73 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 2.75 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 6.1 mΩ |
| |VGS(TH)| Min (V) | 0.5 V |
| |VGS(TH)| Max (V) | 1.4 V |
| QG Typ @ |VGS| = 4.5V (nC) | 35.7 (@4V) nC |
| CISS Typ (pF) | 3039 pF |
| CISS Condition @|VDS| (V) | 10 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2647 | 2023-10-12 | 2024-01-12 | Back Metal Composition Change for Select Discrete Products |
| PCN-2474 | 2020-12-16 | 2021-03-16 | Qualification of Additional Wafer Source for Select Discrete Products |
| PCN-2456 | 2020-05-29 | 2020-08-29 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site Using Copper or Palladium Coated Copper Bond Wire with Standardization of Assembly Bill of Materials, Or as an Additional Wafer Plating, Back Grinding and Back Metal Process Source, and Qualification of Additional Wafer Source for Select Discrete Products. |
