Diodes Incorporated — Analog and discrete power solutions
TO252 DPAK

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DMN15H310SK3

150V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Feature(s)

  • Low RDS(ON) – ensures on state losses are minimized
  • Small form factor thermally efficient package enables higher density end products
  • Lead-Free Finish; RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability

Application(s)

  • Power Management Functions
  • LED Backlight

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 150 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 8.3
PD @TA = +25°C (W) 2.55
PD @TC = +25°C (W) 32
RDS(ON)Max@ VGS(10V)(mΩ) 310 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 330 (@5V) mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 4.6 (@5V) nC
QG Typ @ |VGS| = 10V (nC) 8.7 nC
CISS Typ (pF) 405 pF
CISS Condition @|VDS| (V) 25 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf