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DMN2004K

N-Channel Mosfet

Datasheet

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Description

This new generation MOSFET has been designed to minimize the on-state resistance (R_DS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Low On-Resistance: R_DS(on)= 550mΩ (max) @ V_GS = 4.5V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected up to 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/.
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/

Application(s)

DC-DC converters
Power-management functions

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	20 V
\|V_GS\| (±V)	8 ±V
\|I_DS\| @T_A = +25°C (A)	0.63
P_D @T_A = +25°C (W)	0.35
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	550 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	700 mΩ
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	900 mΩ
\|V_GS(TH)\| Min (V)	0.5 V
\|V_GS(TH)\| Max (V)	1 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.9 nC
C_ISS Typ (pF)	87 pF

Technical Documents

SPICE Model

DMN2004K.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2690	2024-05-29	2024-08-29	Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products.
PCN-2458	2020-07-01	2020-10-01	Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products
PCN-2403	2019-03-25	2019-06-19	Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, Additional Wafer Source, or Additional Assembly and Test site for Select Products.