Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
PowerDI3333-8.png20V N-CHANNEL ENHANCEMENT MODE MOSFET
Contact Sales
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101 and supported by a PPAP.
• Low RDS(ON)—Ensures On-State Losses are Minimized
• Small-Form Factor Thermally Efficient Package Enables Higher Density End Products
• Occupies 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product
• 100% Unclamped Inductive Switching, Test in Production—Ensures More Reliable And Robust End Application
• Motor Control
• Load Switch
• DC-DC Converters
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Automotive |
| Polarity | N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 20 V |
| |VGS| (±V) | 12 ±V |
| |IDS| @TA = +25°C (A) | 18 |
| PD @TA = +25°C (W) | 2.27 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 4.6 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 8.7 mΩ |
| |VGS(TH)| Min (V) | 0.4 V |
| |VGS(TH)| Max (V) | 1.2 V |
| QG Typ @ |VGS| = 4.5V (nC) | 68.8 nC |
| QG Typ @ |VGS| = 10V (nC) | 164 nC |
| CISS Typ (pF) | 6495 pF |
| CISS Condition @|VDS| (V) | 10 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2522 | 2021-08-24 | 2021-11-24 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly/Test Site Using PdCu or Cu Bond Wire with Standardization of Assembly Bill of Materials for Select Automotive Products |
