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DMN2013UFDE

N-Channel Mosfet

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Description

This new generation 20V N Channel enhancement mode MOSFET has been designed to minimise R_DS(on) and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.

Application(s)

General Purpose Interfacing Switch
Power Management Functions

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	20 V
\|V_GS\| (±V)	8 ±V
\|I_DS\| @T_A = +25°C (A)	10.5
P_D @T_A = +25°C (W)	2.03
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	11 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	13 mΩ
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	30 mΩ
\|V_GS(TH)\| Min (V)	0.5 V
\|V_GS(TH)\| Max (V)	1.1 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	14.3 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	25.8 (@8V) nC
C_ISS Typ (pF)	2453 pF

Technical Documents

SPICE Model

DMN2013UFDE.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2340	2018-04-26	2018-05-26	Qualification of Alternate Wafer Sources for Select MOSFET Products