Diodes Incorporated — Analog and discrete power solutions
U DFN2020 6 Type F

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U-DFN2020-6-Type-F.png
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DMN2013UFDEQ

20V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • 0.6mm Profile – Ideal for Low Profile Applications
  • PCB Footprint of 4mm2
  • Low Gate Threshold Voltage
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DMN2013UFDEQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • General Purpose Interfacing Switch
  • Power Management Functions

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 20 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 10.5
PD @TA = +25°C (W) 1.31
RDS(ON)Max@ VGS(4.5V)(mΩ) 11 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 13 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 30 mΩ
|VGS(TH)| Min (V) 0.5 V
|VGS(TH)| Max (V) 1.1 V
QG Typ @ |VGS| = 4.5V (nC) 14.3 nC
CISS Typ (pF) 2453 pF
CISS Condition @|VDS| (V) 10 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC