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DMN2016LFG

N-Channel Mosfet

Datasheet

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (R_DS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

Power management functions

Battery Pack

Load Switch

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N+N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	20 V
\|V_GS\| (±V)	8 ±V
\|I_DS\| @T_A = +25°C (A)	5.2
P_D @T_A = +25°C (W)	0.77
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	18 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	22 mΩ
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	30 mΩ
\|V_GS(TH)\| Min (V)	0.4 V
\|V_GS(TH)\| Max (V)	1.1 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	16 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	37 nC
C_ISS Typ (pF)	1472 pF

Technical Documents

SPICE Model

DMN2016LFG.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2402	2019-05-15	2019-08-15	Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site and Conversion to Palladium Coated Copper Bond Wire with New Lead Frame Type on Select Products