Diodes Incorporated — Analog and discrete power solutions
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DMN2022UNS

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Complementary Pair MOSFET
  • ESD Protected Up to 2kV
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device

Application(s)

  • Battery Charge Protection
  • Loadswitch

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) Yes
|VDS| (V) 20 V
|VGS| (±V) 10 ±V
|IDS| @TA = +25°C (A) 10.7
PD @TA = +25°C (W) 1.9
RDS(ON)Max@ VGS(4.5V)(mΩ) 10.8 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 14.5 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 17 mΩ
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 20.3 nC
CISS Typ (pF) 1870 pF

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf