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DMN2027USS

N-Channel Mosfet

Datasheet

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Description

This new generation 20V N channel enhancement mode MOSFET has been designed to minimise R_DS(on) and yet maintain superior switching performance. This device is ideally suited to backlight, motor control and other power management functions.

Application(s)

Backlightring

Motor control

DCDC Conversion

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	20 V
\|V_GS\| (±V)	12 ±V
\|I_DS\| @T_A = +25°C (A)	10.5
P_D @T_A = +25°C (W)	2
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	12.5 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	19 mΩ
\|V_GS(TH)\| Min (V)	0.7 V
\|V_GS(TH)\| Max (V)	1.3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	11.6 nC
C_ISS Typ (pF)	1000 pF

Technical Documents

SPICE Model

DMN2027USS .spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile