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DMN2028UFDH

N-Channel Mosfet

Datasheet

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (R_DS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

Power management functions

Load Switch

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N+N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	20 V
\|V_GS\| (±V)	12 ±V
\|I_DS\| @T_A = +25°C (A)	6.8
P_D @T_A = +25°C (W)	1.5
R_DS(ON)Max@ V_GS(10V)(mΩ)	20 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	22 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	26 mΩ
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	36 mΩ
\|V_GS(TH)\| Min (V)	0.5 V
\|V_GS(TH)\| Max (V)	1 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	8.5 nC
C_ISS Typ (pF)	151 pF

Technical Documents

SPICE Model

DMN2028UFDH .spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2495	2021-03-31	2021-07-01	Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products
PCN-2425	2019-10-04	2020-01-04	Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and Additional Wafer Source for Select Products.