N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) and making it ideal for high efficiency power management.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N+N |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 24 V |
| |VGS| (±V) | 12 ±V |
| |IDS| @TA = +25°C (A) | 5 |
| PD @TA = +25°C (W) | 1.45 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 36 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 52 mΩ |
| |VGS(TH)| Min (V) | 0.5 V |
| |VGS(TH)| Max (V) | 1.3 V |
| QG Typ @ |VGS| = 4.5V (nC) | 12.6 nC |
