Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

TSOT26.png

Back to MOSFET Master Table

DMN2041UVT

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

Contact Sales

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q101, PPAP capable, and
manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.
https://www.diodes.com/quality/product-definitions/

Application(s)

Backlighting
DC-DC Converters
Power Management Functions

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N+N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	20 V
\|V_GS\| (±V)	8 ±V
\|I_DS\| @T_A = +25°C (A)	5.8
P_D @T_A = +25°C (W)	1.1
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	28 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	32 mΩ
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	40 mΩ
\|V_GS(TH)\| Min (V)	0.4 V
\|V_GS(TH)\| Max (V)	0.9 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	9.1 nC
C_ISS Typ (pF)	689 pF
C_ISS Condition @\|V_DS\| (V)	10 V

Technical Documents

SPICE Model

DMN2041UVT.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile