N-CHANNEL ENHANCEMENT MODE MOSFET
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AEC Qualified | No |
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Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 20 V |
|VGS| (±V) | 12 ±V |
|IDS| @TA = +25°C (A) | 3.5 |
PD @TA = +25°C (W) | 0.7 |
RDS(ON)Max@ VGS(10V)(mΩ) | 42 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 45 mΩ |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 60 mΩ |
RDS(ON)Max@ VGS(1.8V)(mΩ) | 91 mΩ |
|VGS(TH)| Min (V) | 0.4 V |
|VGS(TH)| Max (V) | 1.2 V |
QG Typ @ |VGS| = 4.5V (nC) | 3.6 nC |
QG Typ @ |VGS| = 10V (nC) | 7.7 nC |
CISS Typ (pF) | 281 pF |
CISS Condition @|VDS| (V) | 10 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2601 | 2022-10-28 | 2023-01-28 | Additional Wafer Source for Select Discrete Products |