NRND = Not Recommended for New Design
N-Channel Mosfet
Contact Sales
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| Compliance (Only Automotive supports PPAP) | DMN2065UWQ |
|---|---|
| CISS Condition @|VDS| (V) | N/A |
| CISS Typ (pF) | 400 |
| ESD Diodes (Y|N) | No |
| |IDS| @TA = +25°C (A) | 2.8 |
| PD @TA = +25°C (W) | 0.7 |
| Polarity | N |
| QG Typ @ |VGS| = 10V (nC) | 12.1 |
| QG Typ @ |VGS| = 4.5V (nC) | 5.4 |
| AEC Qualified | Yes |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 93 |
| RDS(ON)Max@ VGS(10V)(mΩ) | N/A |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 65 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 56 |
| |VDS| (V) | 20 |
| |VGS| (±V) | 12 |
| |VGS(TH)| Max (V) | 1 |
| |VGS(TH)| Min (V) | 0.35 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2389 | 2019-02-05 | 2019-08-05 | Device End of Life |
