N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) with thin WLCSP packaging process and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 20 V |
| |VGS| (±V) | 8 ±V |
| |IDS| @TA = +25°C (A) | 4 |
| PD @TA = +25°C (W) | 1.25 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 56 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 68 mΩ |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 90 mΩ |
| |VGS(TH)| Min (V) | 0.4 V |
| |VGS(TH)| Max (V) | 1 V |
| QG Typ @ |VGS| = 4.5V (nC) | 7.4 nC |
| CISS Typ (pF) | 540 pF |
| CISS Condition @|VDS| (V) | 10 V |
