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SOT23.pngNRND = Not Recommended for New Design
20V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
| Compliance (Only Automotive supports PPAP) | Automotive |
|---|---|
| CISS Condition @|VDS| (V) | 10 |
| CISS Typ (pF) | 188 |
| Compliance (Only Automotive(Q) supports PPAP) | Automotive |
| Configuration | Single |
| ESD Diodes (Y|N) | No |
| |IDS| @TA = +25°C (A) | 2 |
| PD @TA = +25°C (W) | 0.6 |
| Polarity | N |
| Compliance (Only Automotive supports PPAP) | Automotive (Q) |
| QG Typ @ |VGS| = 4.5V (nC) | 2.3 |
| AEC Qualified | Yes |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 230 |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 145 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 110 |
| |VDS| (V) | 20 |
| |VGS| (±V) | 12 |
| |VGS(TH)| Max (V) | 1 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2639 | 2023-09-26 | 2023-12-26 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu Bond Wire with Standardization of Assembly Bill of Materials at CAT for Select Automotive Products |
