N-Channel Mosfet
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This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 20 V |
| |VGS| (±V) | 8 ±V |
| |IDS| @TA = +25°C (A) | 1.32 |
| PD @TA = +25°C (W) | 0.47 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 175 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 240 mΩ |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 360 mΩ |
| |VGS(TH)| Min (V) | 0.45 V |
| |VGS(TH)| Max (V) | 0.95 V |
| QG Typ @ |VGS| = 4.5V (nC) | 0.89 nC |
| CISS Typ (pF) | 70 pF |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2425 | 2019-10-04 | 2020-01-04 | Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and Additional Wafer Source for Select Products. |
| PCN-2299 | 2018-03-01 | 2018-06-01 | Additional Qualified (A/T) Assembly Test Site |
