Diodes Incorporated — Analog and discrete power solutions
X2 DFN1310 6

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DMN2300UFL4

N-Channel Mosfet

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Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • Load switch

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) Yes
|VDS| (V) 20 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 2.11
PD @TA = +25°C (W) 1.39
RDS(ON)Max@ VGS(4.5V)(mΩ) 195 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 260 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 380 mΩ
|VGS(TH)| Min (V) 0.45 V
|VGS(TH)| Max (V) 0.95 V
QG Typ @ |VGS| = 4.5V (nC) 1.6 nC
CISS Typ (pF) 70 pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2425 2019-10-04 2020-01-04 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and
Additional Wafer Source for Select Products.