Diodes Incorporated — Analog and discrete power solutions
X2 DFN1310 6

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DMN2300UFL4Q

20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101 and is supported by a PPAP.

Feature(s)

  • Footprint of Just 1.3mm2
  • Ultra Low Profile Package — 0.4mm Profile
  • On Resistance <200mΩ
  • Low Gate Threshold Voltage
  • Fast Switching Speed
  • Ultra-Small Surface Mount Package
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 
  • The DMN2300UFL4Q is suitable for automotive applications
    requiring specific change control and is AEC-Q101 qualified,
    is PPAP capable, and is manufactured in IATF16949:2016
    certified facilities.

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N+N
ESD Diodes (Y|N) Yes
|VDS| (V) 20 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 2.11
PD @TA = +25°C (W) 1.39
RDS(ON)Max@ VGS(4.5V)(mΩ) 195 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 260 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 380 mΩ
|VGS(TH)| Max (V) 0.95 V
QG Typ @ |VGS| = 4.5V (nC) 1.6 nC
CISS Typ (pF) 67.6 pF
CISS Condition @|VDS| (V) 20 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC