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DMN2310UFB4

N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

Footprint of Just 0.6mm2 – Thirteen Times Smaller than SOT23
0.4mm Profile – Ideal for Low Profile Applications
Low Gate Threshold Voltage
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. “Green” Device
For automotive applications requiring specific change
control (i.e. parts qualified to AEC-Q100/101/200, PPAP
capable, and manufactured in IATF 16949 certified facilities),
please contact us or your local Diodes representative.
https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	20 V
\|V_GS\| (±V)	8 ±V
\|I_DS\| @T_A = +25°C (A)	2.1
P_D @T_A = +25°C (W)	1.14
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	150 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	190 mΩ
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	250 mΩ
\|V_GS(TH)\| Min (V)	0.45 V
\|V_GS(TH)\| Max (V)	0.95 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.7 nC
C_ISS Typ (pF)	38 pF
C_ISS Condition @\|V_DS\| (V)	10 V

Technical Documents

SPICE Model

DMN2310UFB4.spice.txt

Recommended Soldering Techniques

TN1.pdf