N-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET has been designed to minimize on-state resistance
(RDS(ON)) yet maintain superior switching performance, making it ideal
for high-efficiency power management applications.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 20 V |
| |VGS| (±V) | 8 ±V |
| |IDS| @TA = +25°C (A) | 1.3 |
| PD @TA = +25°C (W) | 0.55 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 200 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 280 mΩ |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 380 mΩ |
| |VGS(TH)| Min (V) | 0.45 V |
| |VGS(TH)| Max (V) | 0.95 V |
| QG Typ @ |VGS| = 4.5V (nC) | 0.7 nC |
| CISS Typ (pF) | 38 pF |
| CISS Condition @|VDS| (V) | 10 V |
