NRND = Not Recommended for New Design
N-Channel Mosfet
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This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Compliance (Only Automotive supports PPAP) | DMN2400UFDQ |
---|---|
CISS Condition @|VDS| (V) | N/A |
CISS Typ (pF) | 38 |
ESD Diodes (Y|N) | Yes |
|IDS| @TA = +25°C (A) | 0.9 |
PD @TA = +25°C (W) | 0.8 |
Polarity | N |
QG Typ @ |VGS| = 10V (nC) | N/A |
QG Typ @ |VGS| = 4.5V (nC) | 0.5 |
AEC Qualified | Yes |
RDS(ON)Max@ VGS(1.8V)(mΩ) | 1000 |
RDS(ON)Max@ VGS(10V)(mΩ) | N/A |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 800 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 600 |
|VDS| (V) | 20 |
|VGS| (±V) | N/A |
|VGS(TH)| Max (V) | 1 |
|VGS(TH)| Min (V) | 0.45 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2389 | 2019-02-05 | 2019-08-05 | Device End of Life |
PCN-2340 | 2018-04-26 | 2018-05-26 | Qualification of Alternate Wafer Sources for Select MOSFET Products |