NRND = Not Recommended for New Design
20V N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power anagement applications.
| Compliance (Only Automotive supports PPAP) | Automotive |
|---|---|
| CISS Condition @|VDS| (V) | 16 |
| CISS Typ (pF) | 37 |
| Compliance (Only Automotive(Q) supports PPAP) | Automotive |
| Configuration | Single |
| ESD Diodes (Y|N) | Yes |
| |IDS| @TA = +25°C (A) | 0.9 |
| PD @TA = +25°C (W) | 0.85 |
| Polarity | N |
| Compliance (Only Automotive supports PPAP) | Automotive (Q) |
| QG Typ @ |VGS| = 4.5V (nC) | 0.5 |
| AEC Qualified | Yes |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 1000 |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 800 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 600 |
| |VDS| (V) | 20 |
| |VGS| (±V) | 12 |
| |VGS(TH)| Max (V) | 1 |
