N-CHANNEL ENHANCEMENT MODE MOSFET
Contact Sales
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 20 V |
| |VGS| (±V) | 12 ±V |
| |IDS| @TA = +25°C (A) | 0.9 |
| PD @TA = +25°C (W) | 0.89 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 600 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 800 mΩ |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 1000 mΩ |
| |VGS(TH)| Min (V) | 0.45 V |
| |VGS(TH)| Max (V) | 1 V |
| QG Typ @ |VGS| = 4.5V (nC) | 0.7 nC |
| CISS Typ (pF) | 52 pF |
| CISS Condition @|VDS| (V) | 16 V |
