Diodes Incorporated — Analog and discrete power solutions
X2 DFN0806 3

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

X2-DFN0806-3.png
Back to MOSFET Master Table

DMN2550UFA

N-Channel Mosfet

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • General Purpose Interfacing Switch
  • Power Management Functions
  • Analog Switch

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 20 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 0.6
PD @TA = +25°C (W) 0.36
RDS(ON)Max@ VGS(4.5V)(mΩ) 450 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 550 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 750 mΩ
|VGS(TH)| Min (V) 0.4 V
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 0.88 nC
CISS Typ (pF) 54 pF

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf