Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
SOT363.pngDual N-CHANNEL ENHANCEMENT MODE MOSFET
Contact Sales
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N+N |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 20 V |
| |VGS| (±V) | 6 ±V |
| |IDS| @TA = +25°C (A) | 0.8 |
| PD @TA = +25°C (W) | 0.49 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 450 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 600 mΩ |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 750 mΩ |
| |VGS(TH)| Max (V) | 1 V |
| QG Typ @ |VGS| = 4.5V (nC) | 0.6 nC |
