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DMN2710UFB

N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET has been designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.

Feature(s)

Footprint of Just 0.6mm²—13 Times Smaller Than SOT23
Low Gate Threshold Voltage
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.

https://www.diodes.com/quality/product-definitions/

Application(s)

Portable electronics

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	20 V
\|V_GS\| (±V)	6 ±V
\|I_DS\| @T_A = +25°C (A)	1.3
P_D @T_A = +25°C (W)	1.3
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	450 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	600 mΩ
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	750 mΩ
\|V_GS(TH)\| Min (V)	0.5 V
\|V_GS(TH)\| Max (V)	1 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.6 nC
C_ISS Typ (pF)	42 pF
C_ISS Condition @\|V_DS\| (V)	16 V

Technical Documents

SPICE Model

DMN2710UFB.spice.txt

Recommended Soldering Techniques

TN1.pdf