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DMN2992UFB4Q

20V N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON))yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Footprint of Just 0.6mm² – Thirteen Times Smaller than SOT23
4mm Profile – Ideal for Low Profile Applications
Low Gate Threshold Voltage
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DIODES^TM DMN2992UFB4Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

Load switches

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	20 V
\|V_GS\| (±V)	8 ±V
\|I_DS\| @T_A = +25°C (A)	0.83
P_D @T_A = +25°C (W)	1.02
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	990 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	1200 mΩ
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	1800 mΩ
\|V_GS(TH)\| Min (V)	0.4 V
\|V_GS(TH)\| Max (V)	1 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.41 nC
C_ISS Typ (pF)	15.6 pF
C_ISS Condition @\|V_DS\| (V)	16 V

Technical Documents

SPICE Model

DMN2992UFB4Q.spice.txt

Recommended Soldering Techniques

TN1.pdf