Diodes Incorporated — Analog and discrete power solutions
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DMN3009LFVQ

30V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Feature(s)

  • Low RDS(ON)—Ensures On-State Losses are Minimized
  • Small Form Factor Thermally Efficient Package Enables Higher
    Density End Products
  • Occupies Just 33% of the Board Area Occupied by SO-8 Enabling
    Smaller End Product
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen- and Antimony-Free. “Green” Device 
  • The DMN3009LFVQ is suitable for automotive applications
    requiring specific change control; this part is AEC-Q101
    qualified, PPAP capable, and manufactured in IATF 16949
    certified facilities.
    https://www.diodes.com/quality/product-definitions/

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 70
PD @TA = +25°C (W) 2
RDS(ON)Max@ VGS(10V)(mΩ) 5.5 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 9 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 20 nC
QG Typ @ |VGS| = 10V (nC) 42 nC
CISS Typ (pF) 2000 pF
CISS Condition @|VDS| (V) 15 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf