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DMN3011LFVWQ

30V N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in: backlighting, power-management functions, and DC-DC converters.

Feature(s)

Low R_DS(ON)– ensures on-state losses are minimized
Small form factor thermally efficient package enables higher density end products
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DMN3011LFVWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

Backlighting
Power-management functions
DC-DC converters

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	NA A
\|I_DS\| @T_C = +25°C (A)	58 A
P_D @T_A = +25°C (W)	2.6 W
P_D @T_C = +25°C (W)	2.2 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	11 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	15.2 mΩ
\|V_GS(TH)\| Min (V)	1.4 V
\|V_GS(TH)\| Max (V)	2.25 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	10 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	19.7 nC
C_ISS Typ (pF)	1130 pF
C_ISS Condition @\|V_DS\| (V)	15 V

Technical Documents

SPICE Model

DMN3011LFVWQ.spice.txt

Recommended Soldering Techniques

TN1.pdf