Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

SO-8.png

Back to MOSFET Master Table

DMN3011LSSQ

30V N-Channel Enhancement Mode MOSFET

Datasheet

Contact Sales

Description

This MOSFET is designed to minimize the on-state resistance R_DS(ON)yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Low On-Resistance
Low Input Capacitance
Fast Switching Speed
100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DMN3011LSSQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

Motor controls
Backlighting
Power-management functions
DC-DC converters

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	11
P_D @T_A = +25°C (W)	1.7
R_DS(ON)Max@ V_GS(10V)(mΩ)	10 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	16 mΩ
\|V_GS(TH)\| Min (V)	1.4 V
\|V_GS(TH)\| Max (V)	2.25 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	10 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	19.7 nC
C_ISS Typ (pF)	1130 pF
C_ISS Condition @\|V_DS\| (V)	15 V

Technical Documents

SPICE Model

DMN3011LSSQ.spice.txt

Recommended Soldering Techniques

TN1.pdf