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DMN3030LFG (NRND)

NRND = Not Recommended for New Design

N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (R_DS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

Backlighting

DC-DC Converters

Power Management Functions

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP)	On Request
C_ISS Typ (pF)	751
Compliance (Only Automotive(Q) supports PPAP)	Standard
ESD Diodes (Y\|N)	No
\|I_DS\| @T_A = +25°C (A)	8.6
P_D @T_A = +25°C (W)	2.3
Polarity	N
Q_G Typ @ \|V_GS\| = 10V (nC)	17.4
Q_G Typ @ \|V_GS\| = 4.5V (nC)	9
Q_G Typ @ V_GS = 5V(nC)	N/A
AEC Qualified	Yes
R_DS(ON)Max@ V_GS(10V)(mΩ)	18
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	27
\|V_DS\| (V)	30
\|V_GS\| (±V)	25
\|V_GS(TH)\| Max (V)	2.1

Technical Documents

SPICE Model

DMN3030LFG .spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2579	2022-08-29	2023-02-28	Device End of Life (EOL)