Diodes Incorporated — Analog and discrete power solutions
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DMN3033LSDQ

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Feature(s)

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DMN3033LSDQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N+N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 6.9
PD @TA = +25°C (W) 2
RDS(ON)Max@ VGS(10V)(mΩ) 20 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 27 mΩ
|VGS(TH)| Max (V) 2.1 V
QG Typ @ |VGS| = 4.5V (nC) 6.4 nC
QG Typ @ |VGS| = 10V (nC) 13 nC
CISS Typ (pF) 725 pF
CISS Condition @|VDS| (V) 15 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2485 2020-12-04 2021-03-04 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu or Au Bond Wire, And Qualification of Additional Wafer Source for Select Discrete Automotive Products