Diodes Incorporated — Analog and discrete power solutions
SC59

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DMN3033LSNQ

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation Small-Signal enhancement mode MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Feature(s)

  • Low Gate Charge
  • Low RDS(ON)
  • Low Input/Output Leakage

Application(s)

  • Motor control
  • Backlighting
  • DC-DC Converters
  • Power management functions

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 6
PD @TA = +25°C (W) 1.4
RDS(ON)Max@ VGS(10V)(mΩ) 30 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 40 mΩ
|VGS(TH)| Max (V) 2.1 V
QG Typ @ |VGS| = 4.5V (nC) 10.5 (@5V) nC
CISS Typ (pF) 755 pF
CISS Condition @|VDS| (V) 10 V

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2485 2020-12-04 2021-03-04 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu or Au Bond Wire, And Qualification of Additional Wafer Source for Select Discrete Automotive Products